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1

Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors

Nylandsted-Larsen, Arne, Petersen, J.W., Weyer, G.

Journal:

Materials Science Forum

Year:

1989

File:

PDF, 571 KB

1989

2

Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon

Weyer, G., Nylandsted-Larsen, Arne, Pedersen, F.T., Galloni, R., Rizzoli, R.

Journal:

Materials Science Forum

Year:

1986

File:

PDF, 334 KB

1986

3

Dopant redistribution and formation of electrically active complexes in SiGe

A.Yu. Kuznetsov, J.S. Christensen, E.V. Monakhov, A.-C. Lindgren, H.H. Radamson, A. Nylandsted-Larsen, B.G. Svensson

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 267 KB

english, 2001

4

Mössbauer studies on the changes of the sites of implanted Te and Sb in silicon

G. Weyer, B. I. Deutch, A. Nylandsted-Larsen, H. L. Nielsen

Journal:

Hyperfine Interactions

Year:

1976

Language:

english

File:

PDF, 52 KB

english, 1976

5

Covalency effects on implanted119Sn in group IV semiconductors studied by Mössbauer and channeling experiments

G. Weyer, A. Nylandsted-Larsen, B. I. Deutch, J. U. Andersen, E. Antoncik

Journal:

Hyperfine Interactions

Year:

1975

Language:

english

File:

PDF, 1011 KB

english, 1975

6

Investigation of fluorine-concentration profiles in pulsed-laser-irradiated BF+2 -implanted silicon single crystals

A. Nylandsted-larsen

Year:

1982

Language:

english

File:

PDF, 498 KB

english, 1982

7

Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silica

Ridgway, M. C., Azevedo, G. de M., Elliman, R. G., Glover, C. J., Llewellyn, D. J., Miller, R., Wesch, W., Foran, G. J., Hansen, J., Nylandsted-Larsen, A.

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 129 KB

english, 2005

8

Structural-relaxation-induced bond length and bond angle changes in amorphized Ge

Glover, C. J., Ridgway, M. C., Yu, K. M., Foran, G. J., Desnica-Frankovic, D., Clerc, C., Hansen, J. L., Nylandsted-Larsen, A.

Journal:

Physical Review B

Year:

2001

Language:

english

File:

PDF, 57 KB

english, 2001

9

[IEEE 11th International Conference on Ion Implantation Technology - Austin, TX, USA (16-21 June 1996)] Proceedings of 11th International Conference on Ion Implantation Technology - Ion implantation induced damage in relaxed Si/sub 1-x/Ge/sub x/

Barklie, R.C., O'Raifeartaigh, C., Nylandsted-Larsen, A., Priolo, F., Lulli, G., Grob, J.J., Mesli, A., Lindner, J.K.N., Cristiano, F., Hemment, P.L.F.

Year:

1997

Language:

english

File:

PDF, 351 KB

english, 1997

10

Direct comparison of Mössbauer and channeling studies of implanted 119 sn in silicon single crystals

Weyer, G., Andersen, J. U., Deutch, B. I., Golovchenko, J. A., Nylandsted-larsen, A.

Journal:

Radiation Effects

Year:

1975

Language:

english

File:

PDF, 414 KB

english, 1975

11

Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic, Isotopically Controlled Silicon Heterostructures

Silvestri, Hughes H., Bracht, Hartmut A., Sharp, Ian D., Hansen, John, Nylandsted-Larsen, Arne, Haller, Eugene E.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 99 KB

english, 2004

12

Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments

Weyer, G., Fanciulli, M., Freitag, Kristian, Nylandsted-Larsen, Arne, Lindroos, M., Müller, E., Vestergaard, H.C.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 378 KB

1995

13

Defects in SiGe

Nylandsted-Larsen, Arne

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 525 KB

1997

14

Rapid Thermal Annealing of Ion Implanted Strained Si1-xGex

Thomsen, E.V., Nylandsted-Larsen, Arne, Hansen, J.L., Kringhøj, P., Shiryaev, S.Y., Weyer, G.

Journal:

Materials Science Forum

Year:

1994

File:

PDF, 355 KB

1994

15

Boron Diffusion in Strained and Relaxed Si1-xGex

Zangenberg, N.R., Fage-Pedersen, J., Lundsgaard Hansen, J., Nylandsted-Larsen, Arne

Journal:

Defect and Diffusion Forum

Year:

2001

File:

PDF, 466 KB

2001

16

Defect Impurity Complex Formation at High Donor Concentration in Silicon

Nylandsted-Larsen, Arne, Weyer, G.

Journal:

Materials Science Forum

Year:

1992

File:

PDF, 338 KB

1992

17

The Effect on the Schottky Barrier Height of Diffusion of Pt into Si From PtSi

Moller, L., Chevallier, Jacques, Nylandsted-Larsen, Arne

Journal:

Solid State Phenomena

Year:

1989

File:

PDF, 287 KB

1989

18

Diffusion of Sb in Si1-xGex-Alloy Layers

Kringhøj, P., Nylandsted-Larsen, Arne

Journal:

Defect and Diffusion Forum

Year:

1997

File:

PDF, 426 KB

1997

19

Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si

Janson, Martin S., Linnarsson, Margareta K., Christensen, J.S., Lévêque, P., Kuznetsov, Andrej Yu., Radamson, H.H., Hallén, Anders, Nylandsted-Larsen, Arne, Svensson, Bengt G.

Journal:

Defect and Diffusion Forum

Year:

2001

Language:

english

File:

PDF, 745 KB

english, 2001

20

Amorphous Semiconductor Sample Preparation For Transmission Exafs Measurements

Ridgway, M. C., Glover, C. J., Tan, H. H, Clark, A., Karouta, F., Foran, G. J, Lee, T. W., Moon, Y., Yoon, E., Hansen, J. L., Nylandsted-Larsen, A., Clerc, C., Chaumont, J.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 902 KB

english, 1998

21

Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures

Silvestri, Hughes H., Sharp, Ian D., Bracht, Hartmut A., Nicols, Sam P., Beeman, Jeff W., Hansen, John, Nylandsted-Larsen, Arne, Haller, Eugene E.

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 107 KB

english, 2002

22

Enhanced Electrical Activation in In-Implanted Si 0.35 Ge 0.65 by C Co-Doping

Feng, Ruixing, Kremer, Felipe, Sprouster, David J., Mirzaei, Sahar, Decoster, Stefan, Glover, Chris J., Medling, Scott A., Hansen, John Lundsgaard, Nylandsted-Larsen, Arne, Russo, Salvy P., Ridgway, M

Journal:

Materials Research Letters

Year:

2016

Language:

english

File:

PDF, 1.65 MB

english, 2016

23

Electrical and structural properties of In-implanted Si 1−x Ge x alloys

Feng, R., Kremer, F., Sprouster, D. J., Mirzaei, S., Decoster, S., Glover, C. J., Medling, S. A., Hansen, J. L., Nylandsted-Larsen, A., Russo, S. P., Ridgway, M. C.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 2.75 MB

english, 2016

24

Erratum: “Porosity as a function of stoichiometry and implantation temperature in Ge/Si 1-x Ge x alloys” [J. Appl. Phys. 119 , 094303 (2016)]

Alkhaldi, H. S., Kremer, F., Bierschenk, T., Hansen, J. L., Nylandsted-Larsen, A., Williams, J. S., Ridgway, M. C.

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 604 KB

english, 2017

25

Porosity as a function of stoichiometry and implantation temperature in Ge/Si 1−x Ge x alloys

Alkhaldi, H. S., Kremer, F., Bierschenk, T., Hansen, J. L., Nylandsted-Larsen, A., Williams, J. S., Ridgway, M. C.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 5.38 MB

english, 2016